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The "world's fastest SSD jt" demzta ahten in San Josban Flash Memory Summit 2014 taking tunnel place rendezvnyen Hitachi Global Storage Technology, which has owned Western Digital MRA there.
The food is only a dem stdium commercially mg no hozzfrhet the Tools PCI Express 3.0 Board of keyboard connected, and produce lltsa in m sodpercenknt tunnel 3 mm (512 bjtos blokkmret) I / O operations kpes - such kategris tunnel teljestmnyhez currently TBB, rack mount flashmemrisk ls space consisting trolley must be taken. Ennl durrans much bigger that drives the coincidence elrse 1.5 milliseconds, and one aksleltetse microsendundum mindssze. The HGST fejleszts cheese, specifically optimized protocol uses ksleltetsre, ennl is much more interesting to ACG memriachipeket no flash used, but 45 nanomteres ELJ rssal gyrtott, 1 gigabit PRAM (phase change RAM) lapkkat.
The currently prevalent memriatechnolgikkal ellenttben transistors or not the PRAM's using kondenztorokat trolsra bits, but the material used and Didkók llapotvltozs to p, more precisely, nude trim Various vezetsi tulajdonsgai are 0 (kvzi szigetels) and 1 (j vezets) bits. Buy used materials tunnel in the PRAM is msmilyen kristlyszerkezetbe arranged if olvadspontjuk above or below, kristlyosod llapotblhlnek back, which in turn leads to electrical ELTR si tulajdonsgot eredmnyez.
The kristlyos, llapotbltrtn under olvads lead kihls vezetshez the felforrals amorphous structures are molekulris lead, which is insulating. Trim the sustenance of the PRAM case, all you need do ramelltsra with low w fogyaszts tartalmta kikapcsolst Kveta retains, as a hard drive or a memriakrtya. tunnel Flash memriachipekhez kpest important advantage of the PRAM strapabrsg the llapotvltozs akrtzmilliszor vgbemehet anlkl is that the material "elfradna 'sa chip jrarhatatlann vlna. This fella memriakrtykban the PRAM and NAND SSDs in common flashnl nagysgrenddel a larger RSI and also reads sebessget gr - no coincidence HGST's usually tunnel in the Tools demonstrlt tunnel pace.
The TBB fire've researched PRAM azrt employs industry-developed because gyrtstechnolgiai page Our relatively cheap, introduce longer-Route is miniatrizlhatnak grkezik, mikzben tunnel characterized eslyess make it to Universal memriaknt kivltsa ahttrtrat RAM and also Allows t ve AKR egysges memriaarchitektrj the systems in which the software and data villmgyorsan hozzfrhetek adattrolrla szmr processor, szksges not elszr operatv the DRAM in slow tlteni httrtrrl.
The PRAM St. Grlknt respect to the industry as a flash in the evening and the characteristics of DRAM, which is a non-volatile memria, which can be random too RNI, high mghozz sebessggel. The big TTRS has not valsult you have not seen before napvilgot PRAM's computer-on example j architektrk where ahttrtr and operatv memria tlti role in a single chip, but according tunnel to the HGST PRAM Mr. suited to large teljestmny httrt Learn pljenek r, maybe this could be the first Appr lpsa cr elfogadottsg and elterjeds up.
The Flash Memory Summit 2014 techdemt not only, but also brought the products are wooden HGST mgpedig the FlashMAX mrkajel vllalati III SSD's, for example, that flash memrira PCI Express Felli drives great teljestmnyigny vllalati alkalmazsok al. Members of the FlashMAX tunnel III lure terabjtos are available in 1.1, 2.2 and 1.65 terabjtos terabjtos finish, maximlis READ sebessgk 2.7 GB / s RSI sebessgk to 1.4 GB / s. During a READ operation msodperc 541 thousand random (4K) or 77 thousand RSI operation is the CSCS under 70:30 joint stress-rate is the 200 thousand IOPS in SDS phones. The meghajtkra 5 v garancitvllal the produce.
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